TYPE MTP15N05L MTP15N05LFI MTP15N06L MTP15N06LFI MTP15N05L/FI MTP15N06L/FI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY OATA Voss 50 V 50 V 60 V 60 V ROs(on) 0.15 {} 0.15 {} 0.15 {} 0.15 {} 10 15 A 10 A 15 A 10 A • LOGIC LEVEL ( + 5V) CMOSITTL COMPATIBLE INPUT • HIGH INPUT IMPEDANCE • ULTRA FAST SWITCHING N - channel en.
rating junction temperature (e) Pulse width limited by safe operating area June 1988 MTP15N06L MTP15N06LFI MTP15N05L MTP15N05LFI 60 50 V 60 50 V ±15 V TO-220 ISOWATT220 15 10 A 9.5 6.3 A 40 40 A 75 30 W 0.6 0.24 W/oC - 65 to 150 °C 150 °C 1/6 397 MTP1SNOSLIFI - MTP1SN06L1FI THERMAL DATA Rthj _ease Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max TL Maximum lead temperature for soldering purpose max TO-220 IISOWATT220 1.67 I 4.16 62.5 275 °CIW °C °C ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specifi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTP15N05EL |
Motorola |
POWER FIELD EFFECT TRANSISTOR | |
2 | MTP15N06L |
Motorola |
(MTP15N05L / MTP15N06L) POWER FIELD EFFECT TRANSISTOR | |
3 | MTP15N06L |
STMicroelectronics |
N-Channel MOSFET | |
4 | MTP15N06V |
Motorola |
TMOS POWER FET | |
5 | MTP15N06V |
ON Semiconductor |
Power MOSFET | |
6 | MTP15N06VL |
Motorola |
TMOS POWER FET | |
7 | MTP15N08EL |
Motorola |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE | |
8 | MTP15N15 |
Motorola |
POWER FIELD EFFECT TRANSISTOR | |
9 | MTP10-B7F55 |
MemsFrontier |
Thermopile Sensor | |
10 | MTP1013C3 |
CYStech Electronics |
-20V P-CHANNEL MOSFET | |
11 | MTP10N05 |
Motorola |
(MTP10N05 / MTP10N06) N-Channel Power MOSFETs | |
12 | MTP10N06 |
Motorola |
(MTP10N05 / MTP10N06) N-Channel Power MOSFETs |