MTP12P10 - Motorola

MTP12P10 TMOS POWER FET

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12P10/D Power Field Effect Transistor This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C • De.

Features

°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 100 100 ± 20 ± 40 12 28 75 0.6
  – 65 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts W/°C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient° Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds RθJC RθJA TL 1.67 62.5 260 °C/W °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device ch.