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MTP12P10 |
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| Part Number | MTP12P10 |
| Manufacturer | Motorola |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12P10/D Power Field Effect Transistor This TMOS Power FET is designed for medium voltage, high speed power switching appli... |
| Features |
°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 100 100 ± 20 ± 40 12 28 75 0.6 – 65 to 150 Unit Vdc Vdc Vdc Vpk Adc Watts W/°C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient° Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds RθJC RθJA TL 1.67 62.5 260 °C/W °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device ch... |
| Document |
 MTP12P10 Data Sheet
PDF 190.94KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP12P10 |
ON Semiconductor |
Power MOSFET |
|
| 2 | MTP12P06 |
Motorola |
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR |
|
| 3 | MTP12N05E |
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
| 4 | MTP12N06EZL |
Motorola |
TMOS POWER FET |
|
| 5 | MTP12N10E |
Motorola |
TMOS POWER FET |
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