MTD6N20E - Motorola

MTD6N20E Power MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers.

Features

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  –T4 Suffix to Part Number ™ Data Sheet MTD6N20E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM ® D CASE 369A
  –13, Style 2 DPAK G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –to
  –Source Voltage Drain
  –to
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –to
  –Source Voltage — Continuous — Non
  –repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and St.