MTD6N15 - Motorola

MTD6N15 Power MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N15/D Designer's Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. Sili.

Features

above 25°C Total Power Dissipation @ TA = 25°C (1) Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD PD PD TJ, Tstg CASE 369A
  –13, Style 2 DPAK (TO
  –252) MAXIMUM RATINGS Value 150 150 ± 20 ± 40 6.0 20 20 0.16 1.25 0.01 1.75 0.014
  – 65 to +150 Unit Vdc Vdc Vdc Vpk Adc Watts W/°C Watts W/°C Watts W/°C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (1) RθJC RθJA RθJA 6.25 100 71.4 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise no.