MTA50P01SN3 - Cystech Electonics

MTA50P01SN3 -14V P-Channel MOSFET

CYStech Electronics Corp. Spec. No. : C101N3 Issued Date : 2015.09.09 Revised Date : 2016.10.11 Page No. : 1/9 -14V P-Channel Enhancement Mode MOSFET MTA50P01SN3 Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating package BVD.

Features

• Low gate charge
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-4.5V, ID=-3.6A RDSON@VGS=-2.5V, ID=-3.2A -14V -4.3A 42.3mΩ(typ) 62.9mΩ(typ) Symbol MTA50P01SN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTA50P01SN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and .