CYStech Electronics Corp. Spec. No. : C957H8 Issued Date : 2016.06.28 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTA50N15H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C Features • Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A • Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=10A • Low.
• Low On Resistance
ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=20A
• Simple Drive Requirement
RDS(ON)@VGS=4.5V, ID=10A
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
150V 26A 18.4A 4.6A 3.7A 44mΩ(typ) 43mΩ(typ)
Symbol
MTA50N15H8
G:Gate D:Drain S:Source
Outline
Pin 1
S S S G
DFN5×6
D D D D
G S
S
S
D D D D
Pin 1
Ordering Information
Device MTA50N15H8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTA50N15J3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTA50P01SN3 |
Cystech Electonics |
-14V P-Channel MOSFET | |
3 | MTA55N02N3 |
Cystech Electonics |
20V N-Channel Enhancement Mode MOSFET | |
4 | MTA55N20J3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
5 | MTA5D0N04Q8 |
CYStech |
N-Channel MOSFET | |
6 | MTA5D0N04V8 |
CYStech |
N-Channel MOSFET | |
7 | MTA5D0P01H8 |
CYStech |
P-Channel MOSFET | |
8 | MTA001M |
Shindengen Electric |
High Output Interface Driver ICs | |
9 | MTA002 |
Shindengen Electric |
High Output Interface Driver ICs | |
10 | MTA010N01SN3 |
Cystech Electonics |
14V N-Channel Enhancement Mode MOSFET | |
11 | MTA011 |
Shindengen Electric |
High Output Interface Driver ICs | |
12 | MTA012A02CDV8 |
Cystech Electonics |
Common Drain Dual N-Channel Enhancement Mode MOSFET |