The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synchronous inputs pass through registers controlled by a positiv.
• Fast clock and OE# access times
• Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD)
• Separate +3.3V or 2.5V isolated output buffer supply (VDDQ)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and address pipelining
• Clock-controlled and registered addresses, data I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control (interleaved or linear burst)
• Automatic power-down
• 100-pin TQFP package
• 165-pin FBGA package
• Low capacitive bus lo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT58L1MY18D |
Micron Technology |
(MT58xxxx) 16Mb SYNCBURST SRAM | |
2 | MT58L128L18D |
Micron Semiconductor |
(MT58LxxxLxxD) 2Mb SRAM | |
3 | MT58L128L18F |
Micron Semiconductor |
(MT58LxxxLxxF) 2Mb SRAM | |
4 | MT58L128L18P |
Micron Semiconductor |
(MT58LxxxxP) 2Mb SRAM | |
5 | MT58L128L32D1 |
Micron Technology |
(MT58LxxxLxxD1) 4Mb SRAM | |
6 | MT58L128L32F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM | |
7 | MT58L128L36D1 |
Micron Technology |
(MT58LxxxLxxD1) 4Mb SRAM | |
8 | MT58L128L36F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM | |
9 | MT58L128V18F |
Micron Semiconductor |
(MT58LxxxLxxF) 2Mb SRAM | |
10 | MT58L128V18P |
Micron Semiconductor |
(MT58LxxxxP) 2Mb SRAM | |
11 | MT58L128V32F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM | |
12 | MT58L128V36F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM |