MT58L1MV18D |
Part Number | MT58L1MV18D |
Manufacturer | Micron Technology |
Description | The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512... |
Features |
• Fast clock and OE# access times • Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD) • Separate +3.3V or 2.5V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Common data inputs and data outputs • Individual BYTE WRITE control and GLOBAL WRITE • Three chip enables for simple depth expansion and address pipelining • Clock-controlled and registered addresses, data I/Os and control signals • Internally self-timed WRITE cycle • Burst control (interleaved or linear burst) • Automatic power-down • 100-pin TQFP package • 165-pin FBGA package • Low capacitive bus lo... |
Document |
MT58L1MV18D Data Sheet
PDF 526.57KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT58L1MY18D |
Micron Technology |
(MT58xxxx) 16Mb SYNCBURST SRAM | |
2 | MT58L128L18D |
Micron Semiconductor |
(MT58LxxxLxxD) 2Mb SRAM | |
3 | MT58L128L18F |
Micron Semiconductor |
(MT58LxxxLxxF) 2Mb SRAM | |
4 | MT58L128L18P |
Micron Semiconductor |
(MT58LxxxxP) 2Mb SRAM | |
5 | MT58L128L32D1 |
Micron Technology |
(MT58LxxxLxxD1) 4Mb SRAM |