Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MARKING -6.8 -7.5 -8.5 -10 MT58L128L18F MT58L64L32F MT58L64L36F MT58L128V18F MT58L64V32F MT58L64V36F T None • Operating Temperature Range Commercial (0°C to +70°C) Part Number Example: MT58L64L36FT-8.5 The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 2Mb SyncBurst.
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NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58L128L18F, MT58L64L32F, MT58L64L36F; MT58L128V18F, MT58L64V32F, MT58L64V36F
3.3V VDD, 3.3V or 2.5V I/O, Flow-Through
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• Separate +3.3V or +2.5V isolated output buffer supply (VDDQ)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and address pipelining
• Clock-controlled and registered address.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT58L128L18D |
Micron Semiconductor |
(MT58LxxxLxxD) 2Mb SRAM |
|
| 2 | MT58L128L18P |
Micron Semiconductor |
(MT58LxxxxP) 2Mb SRAM |
|
| 3 | MT58L128L32D1 |
Micron Technology |
(MT58LxxxLxxD1) 4Mb SRAM |
|
| 4 | MT58L128L32F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM |
|
| 5 | MT58L128L36D1 |
Micron Technology |
(MT58LxxxLxxD1) 4Mb SRAM |
|
| 6 | MT58L128L36F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM |
|
| 7 | MT58L128V18F |
Micron Semiconductor |
(MT58LxxxLxxF) 2Mb SRAM |
|
| 8 | MT58L128V18P |
Micron Semiconductor |
(MT58LxxxxP) 2Mb SRAM |
|
| 9 | MT58L128V32F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM |
|
| 10 | MT58L128V36F1 |
Micron Technology |
(MT58LxxxLxxF1) 4Mb SRAM |
|
| 11 | MT58L1MV18D |
Micron Technology |
(MT58xxxx) 16Mb SYNCBURST SRAM |
|
| 12 | MT58L1MY18D |
Micron Technology |
(MT58xxxx) 16Mb SYNCBURST SRAM |
|