The MT4C1004J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x1 configuration. During READ or WRITE cycles, each bit is uniquely addressed through the 22 address bits which are entered 11 bits (A0 -A10) at a time. /R/A/S is used to latch the first 11 bits and /C/A/S the latter 11 bits. A READ or WRITE cycle is selected wit.
• Industry standard x1 pinout, timing, functions and packages
• High-performance, CMOS silicon-gate process
• Single +5V ± 10% power supply
• Low-power, 2.5mW standby; 300mW active, typical
• All inputs, outputs and clocks are fully TTL and CMOS compatible
• 1,024-cycle refresh distributed across 16ms
• Refresh modes: /R?A/S-ONLY, /C/A/S-BEFORE-/R/?A/S (CBR), and HIDDEN
• FAST PAGE MODE access cycle www.DataSheet4U.com
• CBR with ?W/E a HIGH (JEDEC test mode capable via WCBR)
2 4 6 8 10 12 14 16 18 20
CAS Vss WE A10
* NC A1 A3 A4 A6 A8
OPTIONS
• Timing 70ns access 80ns access 100ns access 12.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT4C1024 |
Micron Technology |
1M x 1 DRAM | |
2 | MT4C1024-883C |
Micron Technology |
1M x 1 DRAM | |
3 | MT4C1024E |
Micron Technology |
(MT4C1024E / MT4C4256E) 1 MEG PAGE MODE DRAM | |
4 | MT4C1024L |
Micron Technology |
1M x 1 DRAM | |
5 | MT4C1025 |
Micron Technology |
1M x 1 DRAM | |
6 | MT4C1026 |
Micron Technology |
1M x 1 DRAM | |
7 | MT4C1027 |
Micron Technology |
1M x 1 DRAM | |
8 | MT4C16256 |
Micron Technology |
256K x 16 DRAM (MT4C16256/7/8/9) | |
9 | MT4C16270 |
Micron Technology |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE | |
10 | MT4C1M16C3 |
Micron |
1 MEG x 16 FPM DRAM | |
11 | MT4C1M16E5 |
Micron Technology |
EDO DRAM | |
12 | MT4C40004 |
Micron Technology |
4M x 4 DRAM |