MT46V32M8 - Micron Technology

MT46V32M8 Double Data Rate (DDR) SDRAM

256Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks Features • VDD VDD = = 2.5V 2.6V ±0.2V; ±0.1V; VDDQ VDDQ = = 2.5V 2.6V ±0.2V ±0.1V (DDR400)1 • Bidirectional data strobe (DQS) transmitted/ received with data, that is, source-synch.

Features

Double Data Rate (DDR) SDRAM MT46V64M4
  – 16 Meg x 4 x 4 banks MT46V32M8
  – 8 Meg x 8 x 4 banks MT46V16M16
  – 4 Meg x 16 x 4 banks Features
• VDD VDD = = 2.5V 2.6V ±0.2V; ±0.1V; VDDQ VDDQ = = 2.5V 2.6V ±0.2V ±0.1V (DDR400)1
• Bidirectional data strobe (DQS) transmitted/ received with data, that is, source-synchronous data capture (x16 has two
  – one per byte)
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; cente.