MT46V16M8 - Micron Technology

MT46V16M8 (MT46Vxxx) DOUBLE DATA RATE DDR SDRAM

General Description The 128Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM. The 128Mb DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface design.

Features

c . U 4 t Double Data Rate (DDR) SDRAM e e8 Meg x 4 x 4 Banks MT46V32M4h
  – S
  – 4 Meg x 8 x 4 Banks MT46V16M8 a MT46V8M16 at
  – 2 Meg x 16 x 4 Banks .D w w Features Options Marking w For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/sdram
• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
• VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR 400)
• Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two
  – one per byte)
• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
• Diff.