MT45W8MW16BGX - Micron Technology

MT45W8MW16BGX 8MEG X 16 Async/Page/Burst CellularRAM Memory

. .6 Part-Numbering Information. . .9 Valid Part Numbe.

Features

• Single device supports asynchronous, page, and burst operations
• Vcc, VccQ Voltages 1.7V
  –1.95V Vcc 1.7V
  –1.95V VccQ
• Random Access Time: 70ns
• Burst Mode READ and WRITE Access 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 7ns @ 104 MHz
• Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns
• Low Power Consumption Asynchronous READ: < 30mA Intrapage Read: < 15mA Initial access, burst READ: (39ns [4 clocks] @ 104 MHz) < 40mA Co.