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MT45W2MW16BFB - Micron Semiconductor

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MT45W2MW16BFB (MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory

, and Figure 40 on page 50 for 54-ball mechanical drawing. Options (continued) • Configuration: 4 Meg x 16 2 Meg x 16 • Package 54-ball FBGA • Operating Temperature Range Wireless (-25°C to +85°C) Industrial (-40°C to +85°C) NOTE: Marking MT45W4Mx16BFB MT45W2Mx16BFB FB WT IT (contact factory) A part marking guide for the FBGA devices can be found on Micron.

Features


• Single device supports asynchronous, page, and burst operations
• VCC, VCCQ Voltages 1.70V
  –1.95V VCC 1.70V
  –2.25V VCCQ (Option W)
• Random Access Time: 70ns
• Burst Mode Write Access Continuous burst
• Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.5ns @ 104 MHz
• Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns
• Low Power Consumption Asynchronous READ < 25mA Intrapage READ < 15mA Initial access, burst READ: (39ns [4 clocks] @ 1.

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