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MT45W8MW16BGX |
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| Part Number | MT45W8MW16BGX |
| Manufacturer | Micron Technology |
| Description | . . . . . . . . . . .6 Part-Numbering Information. . . .... |
| Features |
• Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V –1.95V Vcc 1.7V –1.95V VccQ • Random Access Time: 70ns • Burst Mode READ and WRITE Access 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential MAX clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 7ns @ 104 MHz • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns • Low Power Consumption Asynchronous READ: < 30mA Intrapage Read: < 15mA Initial access, burst READ: (39ns [4 clocks] @ 104 MHz) < 40mA Co... |
| Document |
 MT45W8MW16BGX Data Sheet
PDF 829.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT45W2ML16PFA |
Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory |
|
| 2 | MT45W2MV16PFA |
Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory |
|
| 3 | MT45W2MW16B |
Micron Semiconductor |
(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory |
|
| 4 | MT45W2MW16BFB |
Micron Semiconductor |
(MT45W2MW16BFB / MT45W4MW16BFB) Burst Cellularram Memory |
|
| 5 | MT45W2MW16PFA |
Micron Semiconductor |
(MT45WxMx16PFA) Async Cellularram Memory |
|