Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . . .11 General Notes . . . .11 Functional Blo.
Features
• VDD = VDDQ = +1.5V ±0.075V
• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• CAS (READ) latency (CL): 5, 6, 7, 8, 9, 10, or 11
• POSTED CAS ADDITIVE latency (AL): 0, CL - 1, CL - 2
• CAS (WRITE) latency (CWL): 5, 6, 7, 8, based on tCK
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT41J64M16 |
Micon |
DDR3 SDRAM |
|
| 2 | MT41J128M16 |
Micon |
DDR3 SDRAM |
|
| 3 | MT41J128M8 |
Micon |
DDR3 SDRAM |
|
| 4 | MT41J1G4 |
Micon |
DDR3 SDRAM |
|
| 5 | MT41J256M16 |
Micon |
DDR3 SDRAM |
|
| 6 | MT41J256M4 |
Micon |
DDR3 SDRAM |
|
| 7 | MT41J256M8 |
Micon |
DDR3 SDRAM |
|
| 8 | MT41J512M4 |
Micon |
DDR3 SDRAM |
|
| 9 | MT41J512M8 |
Micon |
DDR3 SDRAM |
|
| 10 | MT4100 |
MCL |
Broadband CW TWT LAB Amplifier |
|
| 11 | MT4102 |
MagnTek |
Hall-Effect Magnetic Position Sensors |
|
| 12 | MT4103-HR |
marktech optoelectronics |
Standar T-1 LED Lamps |
|