MT41J1G4 - Micon

MT41J1G4 DDR3 SDRAM

........... 12 Industrial Temperature ....... 12 General Notes .............

Features

DDR3 SDRAM MT41J1G4
  – 128 Meg x 4 x 8 banks MT41J512M8
  – 64 Meg x 8 x 8 banks MT41J256M16
  – 32 Meg x 16 x 8 banks Features
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• VDD = V DDQ = 1.5V ±0.075V 1.5V center-terminated push/pull I/O Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based on tCK Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mo.