Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
www.DataSheet4U.com MT3S35T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S35T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.4dB (@f=2GHz) High Gain:|S21e| =13.0dB (@f=2GHz) 2 Marking 3 Q2 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Colle.
·
· Low Noise Figure :NF=1.4dB (@f=2GHz) High Gain:|S21e| =13.0dB (@f=2GHz)
2
Marking
3
Q2
1 2
TESM JEDEC ― ― 2-1B1A
Maximum Ratings (Ta = 25°C)
Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 24 12 100 150 −55~150 Unit V V V mA mA mW °C °C
JEITA TOSHIBA
Weight:0.0022g (typ.)
1
2002-08-19
www.DataSheet4U.com
MT3S35T
Microwave Characteristics (Ta = 25°C)
Characteristics Transition Freque.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT3S36T |
Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE |
|
| 2 | MT3S37T |
Toshiba Semiconductor |
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION |
|
| 3 | MT3S38T |
Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE |
|
| 4 | MT3S03AS |
Toshiba Semiconductor |
SILICON NPN EPITAXIAL PLANAR TYPE |
|
| 5 | MT3S03AT |
Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
|
| 6 | MT3S03AU |
Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
|
| 7 | MT3S04AE |
Toshiba Semiconductor |
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
|
| 8 | MT3S04AS |
Toshiba Semiconductor |
SILICON NPN EPITAXIAL PLANAR TYPE |
|
| 9 | MT3S04AT |
Toshiba Semiconductor |
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
|
| 10 | MT3S04AU |
Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL TYPE |
|
| 11 | MT3S05T |
Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
|
| 12 | MT3S06S |
Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
|