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MT3S35T |
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| Part Number | MT3S35T |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | www.DataSheet4U.com MT3S35T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S35T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.4dB (@... |
| Features |
· · Low Noise Figure :NF=1.4dB (@f=2GHz) High Gain:|S21e| =13.0dB (@f=2GHz) 2 Marking 3 Q2 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 24 12 100 150 −55~150 Unit V V V mA mA mW °C °C JEITA TOSHIBA Weight:0.0022g (typ.) 1 2002-08-19 www.DataSheet4U.com MT3S35T Microwave Characteristics (Ta = 25°C) Characteristics Transition Freque... |
| Document |
 MT3S35T Data Sheet
PDF 149.39KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT3S36T |
Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE |
|
| 2 | MT3S37T |
Toshiba Semiconductor |
VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION |
|
| 3 | MT3S38T |
Toshiba Semiconductor |
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE |
|
| 4 | MT3S03AS |
Toshiba Semiconductor |
SILICON NPN EPITAXIAL PLANAR TYPE |
|
| 5 | MT3S03AT |
Toshiba Semiconductor |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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