MT3S05T - Toshiba Semiconductor

MT3S05T TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

www.DataSheet4U.com MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplifier Applications · · · Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent collector current linearity |S21e|2 = 8.5dB (@1 V/5 mA/1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emit.

Features

¾ 8.5 ¾ Typ. 4.5 8.5 11.5 1.4 Max ¾ ¾ ¾ 2.2 Unit GHz dB dB Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Symbol ICBO IEBO hFE Cre Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz (Note) Min ¾ ¾ 80 ¾ Typ. ¾ ¾ ¾ 0.9 Max 0.1 1 140 1.25 Unit mA mA ¾ pF Note: Cre is measured by 3 terminal method with capacitance bridge. Caution This device electrostatic sensitivity. Please handle with caution. 2 2002-01-23 www.DataSheet4U.com MT3S05T .