MT3207 - MOS-TECH

MT3207 N-Channel Power MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well .

Features

• RDS(on) = 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A
• Low gate charge(Typ. 57nC)
• Low Crss(Typ. 145pF)
• Fast switching
• Improved dv/dt capability
• RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies,active powe.