MT3206A - MOS-TECH

MT3206A N-Channel Power MOSFET

These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-st ate resist ance, provide superior swit ching performance, and wit hstand high energy pulse in t he avalanche and commutation mode. These devices .

Features

• 50A, 60V, RDS(on) = 11.2mΩ @VGS = 10 V
• Low gate charge ( typical 43 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv.