• This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A • High performance trench technology for extermly low RDS(on) • High power and current handing ca.
N-Channel Power® MOSFET
55V, 110A, 7.2mΩ Description
• This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
• RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A
• High performance trench technology for extermly low RDS(on)
• High power and current handing capability
• RoHS compliant
D
G DS
TO-220
G
MT Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source Vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT32018 |
MCE |
(MT32018 / MT32028) Encoder / Decoder | |
2 | MT3202 |
MOS-TECH |
N-Channel Power MOSFET | |
3 | MT32028 |
MCE |
(MT32018 / MT32028) Encoder / Decoder | |
4 | MT3203 |
MT Semiconductor |
N-Channel MOSFET | |
5 | MT3205A |
MOS-TECH |
N-Channel Power MOSFET | |
6 | MT3205AF |
Mos-Tech |
N-Channel Power MOSFET | |
7 | MT3206 |
MT Semiconductor |
60V N-Channel MOSFET | |
8 | MT3206A |
MOS-TECH |
N-Channel Power MOSFET | |
9 | MT3207 |
MOS-TECH |
N-Channel Power MOSFET | |
10 | MT3208 |
MOS-TECH |
N-Channel Power MOSFET | |
11 | MT321012 |
TE |
General Purpose Panel/Plug-in Relays | |
12 | MT321024 |
TE |
General Purpose Panel/Plug-in Relays |