MSF10N80A - Bruckewell

MSF10N80A 800V N-Channel MOSFET

MSF10N80A 800V N-Channel MOSFET FEATURES Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol VDSS ID IDM VGS EAS IAR EAR dv.

Features

Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Parameter Drain-Source Voltage Drain Current Drain Current Drain Current -Continuous (TC=25℃) -Continuous (TC=100℃) -Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation.