MSF10N80 - Bruckewell

MSF10N80 800V N-Channel MOSFET

The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • 100% EAS Test • Rugged Gate Oxide Technology • Extremely Low Intrinsic .

Features

• 100% EAS Test
• Rugged Gate Oxide Technology
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unequalled Gate Charge: 10.5 nC (Typ.)
• Extended Safe Operating Area Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V
• RoHS compliant package Application
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current .