MSD1010T1 - ON Semiconductor

MSD1010T1 Low Saturation Volgate PNP Silicon Driver Transistors

Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications..

Features

= 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Max 250 1.8 RθJA TJ Tstg 556 150
  –55 ~ +150 Unit mW mW/°C °C/W °C °C BASE EMITTER COLLECTOR Preferred devices are ON Semiconductor recommended choices for future use and best overall value. www.DataSheet4U.com www.DataSheet4U.com March, 2001
  – Rev. 3 © Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: MMBT1010LT1/D MMBT1010LT1 MSD1010T1 ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector.