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MSD1010T1 |
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| Part Number | MSD1010T1 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBT1010LT1/D Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving... |
| Features |
= GLP
THERMAL CHARACTERISTICS
Rating Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 225 1.8 RθJA TJ Tstg 556 150 – 55 ~ + 150 Unit mW mW/°C °C/W °C °C CASE 318D –03, STYLE 1 SC-59 ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V(BR)CEO V(BR)EBO ICBO ICEO hFE1(2) VCE(sat)(2) Condition IC = 10 mA, IB = 0 IE = 1... |
| Document |
 MSD1010T1 Data Sheet
PDF 98.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSD1010T1 |
ON Semiconductor |
Low Saturation Volgate PNP Silicon Driver Transistors |
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| 2 | MSD1010T1 |
Leshan Radio Company |
Low Saturation Voltage |
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| 3 | MSD1010T1 |
E-Tech |
Low Saturation Voltage |
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| 4 | MSD100 |
Microsemi |
Glass Passivated Three Phase Rectifier Bridge |
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| 5 | MSD100DA-X |
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Ultra High Brightness Red Led Lamp |
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