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MSD1010T1 |
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| Part Number | MSD1010T1 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve en... |
| Features |
= 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Max 250 1.8 RθJA TJ Tstg 556 150 –55 ~ +150 Unit mW mW/°C °C/W °C °C BASE EMITTER COLLECTOR Preferred devices are ON Semiconductor recommended choices for future use and best overall value. www.DataSheet4U.com www.DataSheet4U.com March, 2001 – Rev. 3 © Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: MMBT1010LT1/D MMBT1010LT1 MSD1010T1 ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector... |
| Document |
 MSD1010T1 Data Sheet
PDF 77.36KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSD1010T1 |
Leshan Radio Company |
Low Saturation Voltage |
|
| 2 | MSD1010T1 |
Motorola |
PNP Silicon Driver Transistors |
|
| 3 | MSD1010T1 |
E-Tech |
Low Saturation Voltage |
|
| 4 | MSD100 |
Microsemi |
Glass Passivated Three Phase Rectifier Bridge |
|
| 5 | MSD100DA-X |
Micro Electronics |
Ultra High Brightness Red Led Lamp |
|