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MSCSM120HRM311AG T-Type SiC MOSFET Power Module Product Overview The MSCSM120HRM311AG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg 1200V, 89A and a dual common source 700V, 124A. : : The following figures show the electrical and pinout location diagrams of the device. Figure 1. Electrical Diagram Figure 2. Pinout Locati.
The MSCSM120HRM311AG device has the following features:
• SiC Power MOSFET
– High speed switching
– Low RDS(on)
– Ultra low loss
• Very low stray inductance
• AlN substrate for improved thermal performance
Benefits
The MSCSM120HRM311AG device has the following benefits:
• Outstanding performance at high-frequency operation
• High-power and high-efficiency rectifiers and converters
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS compliant
Applications
The MSCSM1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSCSM120HRM052NG |
Microchip |
T-Type SiC MOSFET Power Module |
|
| 2 | MSCSM120HRM08NG |
Microchip |
T-Type SiC MOSFET Power Module |
|
| 3 | MSCSM120HRM163AG |
Microchip |
T-Type SiC MOSFET |
|
| 4 | MSCSM120HM16T3AG |
Microchip |
Full Bridge SiC MOSFET Power Module |
|
| 5 | MSCSM120HM50T3AG |
Microchip |
SiC MOSFET |
|
| 6 | MSCSM120AM027CT6AG |
Microsemi |
Phase Leg SiC |
|
| 7 | MSCSM120AM027D3AG |
Microchip |
SiC MOSFET |
|
| 8 | MSCSM120AM03CT6LIAG |
Microsemi |
Very Low Stray Inductance Phase Leg SiC MOSFET |
|
| 9 | MSCSM120AM03T6LIAG |
Microchip |
SiC MOSFET |
|
| 10 | MSCSM120AM042T6AG |
Microchip |
SiC MOSFET |
|
| 11 | MSCSM120AM042T6LIAG |
Microchip |
SiC MOSFET |
|
| 12 | MSCSM120AM08CT3G |
Microsemi |
Phase Leg SiC MOSFET |
|