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MSCSM120HRM052NG T-Type SiC MOSFET Power Module Product Overview The MSCSM120HRM052NG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg 1200V, 472A and a dual common source 700V, 442A. The following figures show the electrical and pinout location diagrams of the device. Figure 1. Electrical Diagram Figure 2. Pinout Location Diagr.
The MSCSM120HRM052NG device has the following features:
• SiC Power MOSFET
– Low RDS(on)
– High temperature performance
• Kelvin source for easy drive
• Low stray inductance
• M5 power connectors
• High level of integration
• Si3N4 substrate for improved thermal performance
Benefits
The MSCSM120HRM052NG device has the following benefits:
• Outstanding performance at high-frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• Low profile
• RoHS compliant
Applications
The MSCSM120HRM052NG device has the following applications:
• Solar inv.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSCSM120HRM08NG |
Microchip |
T-Type SiC MOSFET Power Module |
|
| 2 | MSCSM120HRM163AG |
Microchip |
T-Type SiC MOSFET |
|
| 3 | MSCSM120HRM311AG |
Microchip |
T-Type SiC MOSFET Power Module |
|
| 4 | MSCSM120HM16T3AG |
Microchip |
Full Bridge SiC MOSFET Power Module |
|
| 5 | MSCSM120HM50T3AG |
Microchip |
SiC MOSFET |
|
| 6 | MSCSM120AM027CT6AG |
Microsemi |
Phase Leg SiC |
|
| 7 | MSCSM120AM027D3AG |
Microchip |
SiC MOSFET |
|
| 8 | MSCSM120AM03CT6LIAG |
Microsemi |
Very Low Stray Inductance Phase Leg SiC MOSFET |
|
| 9 | MSCSM120AM03T6LIAG |
Microchip |
SiC MOSFET |
|
| 10 | MSCSM120AM042T6AG |
Microchip |
SiC MOSFET |
|
| 11 | MSCSM120AM042T6LIAG |
Microchip |
SiC MOSFET |
|
| 12 | MSCSM120AM08CT3G |
Microsemi |
Phase Leg SiC MOSFET |
|