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MSCSM120HM16T3AG Full Bridge SiC MOSFET Power Module Product Overview : The MSCSM120HM16T3AG device is a full bridge 1200V, 173A silicon carbide (SiC) power module. : Notes: • All ratings at TJ = 25 °C, unless otherwise specified. • All multiple inputs and outputs must be shorted together. For example, 13/14 ; 29/30 ; 22/23, and so on. CAUTION These de.
The following are the key features of the MSCSM120HM16T3AG device:
• SiC Power MOSFET
– Low RDS(on)
– High temperature performance
• Very low stray inductance
• Internal thermistor for temperature monitoring
• Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
The following are the benefits of the MSCSM120HM16T3AG device:
• High power and efficiency converters and inverters
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• Solderable terminals both for power and signal for e.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSCSM120HM50T3AG |
Microchip |
SiC MOSFET |
|
| 2 | MSCSM120HRM052NG |
Microchip |
T-Type SiC MOSFET Power Module |
|
| 3 | MSCSM120HRM08NG |
Microchip |
T-Type SiC MOSFET Power Module |
|
| 4 | MSCSM120HRM163AG |
Microchip |
T-Type SiC MOSFET |
|
| 5 | MSCSM120HRM311AG |
Microchip |
T-Type SiC MOSFET Power Module |
|
| 6 | MSCSM120AM027CT6AG |
Microsemi |
Phase Leg SiC |
|
| 7 | MSCSM120AM027D3AG |
Microchip |
SiC MOSFET |
|
| 8 | MSCSM120AM03CT6LIAG |
Microsemi |
Very Low Stray Inductance Phase Leg SiC MOSFET |
|
| 9 | MSCSM120AM03T6LIAG |
Microchip |
SiC MOSFET |
|
| 10 | MSCSM120AM042T6AG |
Microchip |
SiC MOSFET |
|
| 11 | MSCSM120AM042T6LIAG |
Microchip |
SiC MOSFET |
|
| 12 | MSCSM120AM08CT3G |
Microsemi |
Phase Leg SiC MOSFET |
|