MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–s.
60B
–05, STYLE 1 NI
–360 MRF9030R1
CASE 360C
–05, STYLE 1 NI
–360S MRF9030SR1
MAXIMUM RATINGS
Rating Drain
–Source Voltage Gate
–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature MRF9030R1 MRF9030SR1 Symbol VDSS VGS PD PD Tstg TJ Value 68
–0.5, +15 92 0.53 117 0.67
–65 to +200 200 Unit Vdc Vdc Watts W/°C Watts W/°C °C °C
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF9030LR1 |
Motorola |
RF Power Field Effect Transistors | |
2 | MRF9030LR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor | |
3 | MRF9030LSR1 |
Motorola |
RF Power Field Effect Transistors | |
4 | MRF9030MBR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors | |
5 | MRF9030MBR1 |
Freescale Semiconductor |
RF POWER FIELD EFFECT TRANSISTORS | |
6 | MRF9030MR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors | |
7 | MRF9030MR1 |
Freescale Semiconductor |
RF POWER FIELD EFFECT TRANSISTORS | |
8 | MRF9030NBR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors | |
9 | MRF9030NR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors | |
10 | MRF9030R1 |
Motorola |
RF POWER FIELD EFFECT TRANSISTORS | |
11 | MRF9002NR2 |
Freescale Semiconductor |
RF Power FET | |
12 | MRF9002R2 |
Motorola Inc |
RF Power Field Effect Transistor Array |