MRF9030SR1 |
Part Number | MRF9030SR1 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broad... |
Features |
60B –05, STYLE 1 NI –360 MRF9030R1 CASE 360C –05, STYLE 1 NI –360S MRF9030SR1 MAXIMUM RATINGS Rating Drain –Source Voltage Gate –Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature MRF9030R1 MRF9030SR1 Symbol VDSS VGS PD PD Tstg TJ Value 68 –0.5, +15 92 0.53 117 0.67 –65 to +200 200 Unit Vdc Vdc Watts W/°C Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) THERMAL CHARACTERISTICS Characteristic... |
Document |
MRF9030SR1 Data Sheet
PDF 404.83KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF9030LR1 |
Motorola |
RF Power Field Effect Transistors | |
2 | MRF9030LR1 |
Freescale Semiconductor |
RF Power Field Effect Transistor | |
3 | MRF9030LSR1 |
Motorola |
RF Power Field Effect Transistors | |
4 | MRF9030MBR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors | |
5 | MRF9030MBR1 |
Freescale Semiconductor |
RF POWER FIELD EFFECT TRANSISTORS |