MRF5035 |
Part Number | MRF5035 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industri... |
Features |
XIMUM RATINGS
Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1 MΩ) Gate –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Symbol Min Typ Value 36 36 ± 20 15 97 0.56 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 1.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Max Unit OFF CHARACTERISTICS Drain –Source Break... |
Document |
MRF5035 Data Sheet
PDF 142.39KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF5003 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
2 | MRF5007 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
3 | MRF5007R1 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
4 | MRF501 |
Motorola Semiconductor |
(MRF501 / MRF502) High Frequency Transistors | |
5 | MRF5015 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |