MRF5003 |
Part Number | MRF5003 |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode The MRF5003 is designed for broadband commerci... |
Features |
ch Reel. • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF5003 3.0 W, 7.5 V, 512 MHz N –CHANNEL BROADBAND RF POWER FET CASE 430 –01, STYLE 2 MAXIMUM RATINGS Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 Meg Ohm) Gate –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 36 36 ± 20 1.7 12.5 0.07 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristi... |
Document |
MRF5003 Data Sheet
PDF 206.20KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | MRF5007 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
2 | MRF5007R1 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
3 | MRF501 |
Motorola Semiconductor |
(MRF501 / MRF502) High Frequency Transistors | |
4 | MRF5015 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
5 | MRF502 |
Motorola Semiconductor |
(MRF501 / MRF502) High Frequency Transistors |