MRF316 - Tyco Electronics

MRF316 The RF Line NPN Silicon RF Power Transistor

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF316/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts Minimum Gain = 10 dB • Built–In Matching Network for Broadband Operation •.

Features

, Junction to Case Symbol RθJC Max 0.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector
  –Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector
  –Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 35 65 65 4.0 — — — — — — — — — — 5.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc,.