MRF314 - Tyco Electronics

MRF314 RF POWER TRANSISTORS

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF314/D The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100% Tested for Load Mismatch at All Ph.

Features

otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 30 mAdc, IB = 0) Collector
  –Emitter Breakdown Voltage (IC = 30 mAdc, VBE = 0) Collector
  –Base Breakdown Voltage (IC = 30 mAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE = 3.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 35 65 65 4.0 — — — — — — — — — — 3.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 1.5 Adc, VCE = 5.0 Vdc) hFE 20 — 80 — NOTE: (continued) 1. These devices are designed for RF operatio.