SEMICONDUCTOR TECHNICAL DATA Order this document by MRF3104/D The RF Line Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 Output Power Power Gain 0.5 W 10.5 dB MRF3105 0.8 W 9 dB MRF3106 1.6 W 8 dB MRF3104 MRF3105 MRF3106 8.0–12 dB GAIN 1.55–1.65 GHz .
x 40 35 22 Unit °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector
–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) Collector
–Base Breakdown Voltage (IC = 1 mA, IE = 0) Emitter
–Base Breakdown Voltage (IE = 0.25 mA, IC = 0) Collector Cutoff Current (VCB = 28 V, IE = 0) MRF3104, MRF3105 MRF3106 BVCEO BVCES BVCBO BVEBO ICBO 22 50 45 3.5 — — — — — — — — — — — — 0.25 0.5 Vdc Vdc Vdc Vdc mAdc
ON CHARACTERISTICS
DC Current Gain (VCE = 5.0 V, IC = 100 mA) hFE 20 35 120 — (continued)
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF3105 |
Tyco Electronics |
(MRF3104 / MRF3105 / MRF3106) MICROWAVE LINEAR POWER TRANSISTORS | |
2 | MRF3106 |
Tyco Electronics |
(MRF3104 / MRF3105 / MRF3106) MICROWAVE LINEAR POWER TRANSISTORS | |
3 | MRF313 |
MA-COM |
The RF Line NPN Silicon High-Frequency Transistor | |
4 | MRF313 |
ASI |
NPN SILICON RF TRANSISTOR | |
5 | MRF313 |
Tyco Electronics |
HIGH-FREQUENCY TRANSISTOR | |
6 | MRF313 |
Motorola |
HIGH-FREQUENCY TRANSISTOR | |
7 | MRF313A |
Motorola |
HIGH FREQUENCY TRANSISTOR | |
8 | MRF314 |
Tyco Electronics |
RF POWER TRANSISTORS | |
9 | MRF314 |
Motorola |
RF POWER TRANSISTORS | |
10 | MRF314A |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
11 | MRF315 |
Eleflow Tech |
NPN Silicon RF Power Transistor | |
12 | MRF315 |
Motorola |
NPN Silicon RF Power Transistors |