MRF1535T1 - Motorola

MRF1535T1 RF Power Field Effect Transistors

( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1535T1 Rev. 7, 3/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large−signa.

Features

inch Reel. MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1 520 MHz, 35 W, 12.5 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFETs CASE 1264−09, STYLE 1 TO−272 PLASTIC MRF1535T1(NT1) CASE 1264A−02, STYLE 1 TO−272 STRAIGHT LEAD PLASTIC MRF1535FT1(FNT1) Table 1. Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature (1) Symbol VDSS VGS ID PD Tstg TJ Value −0.5, +40 ± 20 6 135 0.50 − 65 to +150 200 Unit Vdc Vdc Adc W W/°C °C °C Table 2. Thermal Charac.