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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1500/D The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min • 100% Tested for Load Mismatch at All.
O IC PD Tstg TJ Value 65 65 3.5 35 1750 10
– 65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.1 Unit °C/W
NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measured @32 µs, 2.0%)
Preferred devices are Motorola re.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF150 |
Tyco Electronics |
N-CHANNEL MOS LINEAR RF POWER FET |
|
| 2 | MRF150 |
Motorola |
N-CHANNEL MOS LINEAR RF POWER FET |
|
| 3 | MRF150 |
Advanced Semiconductor |
SILICON RF POWER MOSFET |
|
| 4 | MRF150 |
MA-COM |
RF Power FET |
|
| 5 | MRF15030 |
Motorola |
RF POWER TRANSISTOR |
|
| 6 | MRF15060 |
Motorola |
RF POWER BIPOLAR TRANSISTORS |
|
| 7 | MRF15060S |
Motorola |
RF POWER BIPOLAR TRANSISTORS |
|
| 8 | MRF1507 |
Motorola |
LATERAL NCHANNEL BROADBAND RF POWER MOSFET |
|
| 9 | MRF1507T1 |
Motorola |
LATERAL NCHANNEL BROADBAND RF POWER MOSFET |
|
| 10 | MRF15090 |
Motorola |
RF POWER TRANSISTOR |
|
| 11 | MRF151 |
Tyco Electronics |
N-CHANNEL BROADBAND RF POWER MOSFET |
|
| 12 | MRF151 |
Motorola |
N-CHANNEL BROADBAND RF POWER MOSFET |
|