MRF15060S - Motorola

MRF15060S RF POWER BIPOLAR TRANSISTORS

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–sig.

Features

1, STYLE 1 (MF15060S) MAXIMUM RATINGS Rating Collector
  –Emitter Voltage Collector
  –Emitter Voltage Emitter
  –Base Voltage Collector Current
  – Continuous Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Rating Thermal Resistance, Junction to Case Symbol RθJC Value 25 60 60 8 185 1.43
  – 65 to +150 200 Unit Vdc Vdc Adc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 0.7 Unit °C/W www.DataSheet4U.com RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1996 www.DataSheet4U.com MRF15060 MRF15060S 1 ELECTRICAL C.