MRF1507 - Motorola

MRF1507 LATERAL NCHANNEL BROADBAND RF POWER MOSFET

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1507/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this d.

Features

7T1 8 W, 520 MHz, 7.5 V LATERAL N
  –CHANNEL BROADBAND RF POWER MOSFET CASE 466
  –02, STYLE 1 (PLD 1.5) MAXIMUM RATINGS Rating Drain
  –Source Voltage (1) Gate
  –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg Tj Value 25 ± 20 4 62.5 0.50
  – 65 to +150 150 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Not designed for 12.5 volt applications. Symbol RθJC Max 2 Unit °C/W NOTE
  – CAUTION
  – MOS devices are s.