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MPSW3725 MPSW3725 C TO-226 B E NPN Transistor This device is designed for high current, low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Paramet.
bient
Max
MPSW3725 1.0 8.0 125 50
Units
W mW/°C °C/W °C/W
1999 Fairchild Semiconductor Corporation
MPSW3725
NPN Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage
* Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, VBE = 0 IC = 100 µA, ICE = 0 IE = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MPSW01 |
ON Semiconductor |
One Watt High Current Transistors |
|
| 2 | MPSW01 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 3 | MPSW01 |
Motorola |
One Watt High Current Transistors |
|
| 4 | MPSW01A |
ON Semiconductor |
One Watt High Current Transistors |
|
| 5 | MPSW01A |
Motorola |
One Watt High Current Transistors |
|
| 6 | MPSW05 |
ON Semiconductor |
One Watt Amplifier Transistors |
|
| 7 | MPSW05 |
Motorola |
One Watt Amplifier Transistors |
|
| 8 | MPSW06 |
ON Semiconductor |
One Watt Amplifier Transistors |
|
| 9 | MPSW06 |
Motorola |
One Watt Amplifier Transistors |
|
| 10 | MPSW06 |
Fairchild |
NPN General Purpose Amplifier |
|
| 11 | MPSW10 |
Motorola |
One Watt High Voltage Transistor |
|
| 12 | MPSW13 |
Motorola |
One Watt Darlington Transistors |
|