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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW10/D One Watt High Voltage Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW10 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Devi.
oltage (IC = 100 µAdc, IE = 0) Emitter
–Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 6.0 — — — — — 0.2 0.1 Vdc Vdc Vdc µAdc µAdc
v 300 ms, Duty Cycle v 2.0%.
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
MPSW10
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vd.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MPSW13 |
Motorola |
One Watt Darlington Transistors |
|
| 2 | MPSW13 |
ON Semiconductor |
NPN Transistor |
|
| 3 | MPSW14 |
Motorola |
One Watt Darlington Transistors |
|
| 4 | MPSW01 |
ON Semiconductor |
One Watt High Current Transistors |
|
| 5 | MPSW01 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 6 | MPSW01 |
Motorola |
One Watt High Current Transistors |
|
| 7 | MPSW01A |
ON Semiconductor |
One Watt High Current Transistors |
|
| 8 | MPSW01A |
Motorola |
One Watt High Current Transistors |
|
| 9 | MPSW05 |
ON Semiconductor |
One Watt Amplifier Transistors |
|
| 10 | MPSW05 |
Motorola |
One Watt Amplifier Transistors |
|
| 11 | MPSW06 |
ON Semiconductor |
One Watt Amplifier Transistors |
|
| 12 | MPSW06 |
Motorola |
One Watt Amplifier Transistors |
|