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MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MPSW05 VCEO 60 Vdc MPSW06 80 Collector −Base Voltage MPSW05 VCBO MPSW06 60 80 Vdc Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Der.
• Pb−Free Packages are Available
*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
MPSW05 VCEO
60
Vdc
MPSW06
80
Collector −Base Voltage
MPSW05 VCBO MPSW06
60 80
Vdc
Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
4.0 Vdc 500 mAdc 1.0 W 8.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Amb.
MPSW06 - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW05/D One Watt Amplifier Transistors NPN Silicon COLL.
MPSW06 - Fairchild
MPSW06 Discrete POWER & Signal Technologies MPSW06 C TO-226 B E NPN General Purpose Amplifier This device is design.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MPSW01 |
ON Semiconductor |
One Watt High Current Transistors |
|
| 2 | MPSW01 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 3 | MPSW01 |
Motorola |
One Watt High Current Transistors |
|
| 4 | MPSW01A |
ON Semiconductor |
One Watt High Current Transistors |
|
| 5 | MPSW01A |
Motorola |
One Watt High Current Transistors |
|
| 6 | MPSW05 |
ON Semiconductor |
One Watt Amplifier Transistors |
|
| 7 | MPSW05 |
Motorola |
One Watt Amplifier Transistors |
|
| 8 | MPSW10 |
Motorola |
One Watt High Voltage Transistor |
|
| 9 | MPSW13 |
Motorola |
One Watt Darlington Transistors |
|
| 10 | MPSW13 |
ON Semiconductor |
NPN Transistor |
|
| 11 | MPSW14 |
Motorola |
One Watt Darlington Transistors |
|
| 12 | MPSW3725 |
Fairchild |
NPN Transistor |
|