MP6757 - Toshiba Semiconductor

MP6757 Silicon N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications · The electrodes are isolated from case. · 6 IGBTs are 6 free wheeling diodes are built into 1 package. · Enhancement-mode · High speed : tf = 0.35 µs (max) (IC = 25 A) : trr = 0.15 µs (max) (IF = 25 A) MP6757 Unit: mm Maximum Ratings (Ta = 25°C) .

Features

cut-off current Collector-emitter voltage Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VCES VGE (off) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Test Condition VGE = ±20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 10 mA, VGE = 0 V VCE = 5 V, IC = 25 mA IC = 25 A, VGE = 15 V VCE = 10 V, VGE = 0 V, f = 1 MHz 15 V 0V 62 Ω −15 V IF = 25 A, VGE = 0 V IF = 25 A, VGE = −10 V di/dt = 100 A/µs Transistor Diode 300 V .