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MP6757 |
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| Part Number | MP6757 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications · The electrodes are isolated from case. · 6 IGBTs are 6 free wheeling diodes are built in... |
| Features |
cut-off current Collector-emitter voltage Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time Forward voltage
Reverse recovery time
Thermal resistance
Symbol IGES ICES VCES
VGE (off) VCE (sat)
Cies tr
ton
tf
toff VF
trr
Rth (j-c)
Test Condition
VGE = ±20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 10 mA, VGE = 0 V VCE = 5 V, IC = 25 mA IC = 25 A, VGE = 15 V VCE = 10 V, VGE = 0 V, f = 1 MHz
15 V 0V
62 Ω −15 V
IF = 25 A, VGE = 0 V IF = 25 A, VGE = −10 V di/dt = 100 A/µs Transistor Diode
300 V
... |
| Document |
 MP6757 Data Sheet
PDF 152.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MP6750 |
Toshiba Semiconductor |
N-Channel IGBT |
|
| 2 | MP6752 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 3 | MP6753 |
Toshiba Semiconductor |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | MP6754 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|
| 5 | MP6759 |
Toshiba Semiconductor |
Silicon N-Channel IGBT |
|