MP6752 - Toshiba Semiconductor

MP6752 Silicon N-Channel IGBT

MP6752 TOSHIBA GTR Module Silicon N Channel IGBT MP6752 High Power Switching Applications Motor Control Applications Unit in mm · · · · · The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement−mode Low saturation voltage : VCE(sat) = 4.0V (max.) (IC = 20A) High speed: tf = 0.35µs (max.) (IC = 20A) trr = 0.15µs (max.) (IF = 20.

Features

saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE(off) VCE(sat) Cies tr ton tf toff VF trr Rth(j-c) IF = 20A, VGE = 0 IF = 20A, VGE = -10V di / dt = 50A / µs Transistor Diode Test Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 20mA, VCE = 5V IC = 20A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz Min. ― ― 3.0 ― ― ― ― ― ― ― ― ― ― Typ. ― ― ― 3.0 1300 0.3 0.4 0.2 0.5 1.7 0.08 ― ― Max. ±20 1.0 6.0 4.0 ― 0.6 0.8 0.35 1.0 2.5 0.15 2.08 3.09 V µs °C / W µs Unit µA mA V V pF.