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The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming. MMDx & SMMDx Series Rev. V5 Plastic SMT w/leads Chip & Beam Lead Electrical Specifications: TA = 25°C Model Voltage Brea.
• Output Combs to 40+ GHz
• Transition Times down to 35 ps
• Screening per MIL-PRF-19500 and MIL-PRF-
38534 available
Description
The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.
MMDx & SMMDx Series
Rev. V5
Plastic SMT w/leads
Chip & Beam Lead Electrical Specifications: TA = 25°C
Model
Voltage Breakdown
(VB)
V
Min.
Junction Capacitance
(CJ)
pF
Min.
Max.
Lifetime (t)
ns
Min.
Typ.
Transition Time (t.
MMD820-C12 - Aeroflex
The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMD805-C12 |
MA-COM |
Silicon Step Recovery Diodes |
|
| 2 | MMD805-C12 |
Aeroflex |
Silicon Step Recovery Diodes |
|
| 3 | MMD80R1K2P |
MagnaChip |
N-Channel MOSFET |
|
| 4 | MMD80R1K2QZ |
MagnaChip |
N-Channel MOSFET |
|
| 5 | MMD80R900P |
MagnaChip |
N-channel MOSFET |
|
| 6 | MMD80R900P |
INCHANGE |
N-Channel MOSFET |
|
| 7 | MMD80R900PC |
MagnaChip |
N-Channel MOSFET |
|
| 8 | MMD80R900QZ |
MagnaChip |
N-channel MOSFET |
|
| 9 | MMD810-C12 |
MA-COM |
Silicon Step Recovery Diodes |
|
| 10 | MMD810-C12 |
Aeroflex |
Silicon Step Recovery Diodes |
|
| 11 | MMD830-C11 |
MA-COM |
Silicon Step Recovery Diodes |
|
| 12 | MMD830-C11 |
Aeroflex |
Silicon Step Recovery Diodes |
|